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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS10UM-12 HIGH-SPEED SWITCHING USE FS10UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 qwe wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS ................................................................................ 600V rDS (ON) (MAX) .............................................................. 0.94 ID .......................................................................................... 10A TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 600 30 10 30 150 -55 ~ +150 -55 ~ +150 2.0 Unit V V A A W C C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS10UM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 30 -- -- 2 -- -- 4.5 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.72 3.6 7.0 1500 170 25 25 35 130 45 1.5 -- Max. -- -- 10 1 4 0.94 4.7 -- -- -- -- -- -- -- -- 2.0 0.83 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 5 3 2 tw=10s 100s 1ms 10ms TC = 25C Single Pulse DC POWER DISSIPATION PD (W) 160 DRAIN CURRENT ID (A) 120 101 7 5 3 2 100 7 5 3 2 10-1 7 5 80 40 0 0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 8V 6V PD = 150W CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= 8V 150W 20 10 6V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 12 TC = 25C Pulse Test 8 5V 4 6 5V 4 2 TC = 25C Pulse Test 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10UM-12 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 2.0 TC = 25C Pulse Test 32 ID = 20A 24 15A 16 10A 8 5A 0 0 4 8 12 16 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25C Pulse Test 1.6 VGS = 10V 1.2 20V DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25C VDS=50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC = 25C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 32 24 3 2 75C 100 7 5 3 2 10-1 -1 10 23 5 7 100 23 5 7 101 125C 16 8 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 Ciss 103 7 5 SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 td(off) tf 103 7 5 3 2 102 7 5 Coss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 10-1 23 td(on) tr 5 7 100 23 5 7 101 3 Tch = 25C Crss 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10UM-12 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 40 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test TC=125C GATE-SOURCE VOLTAGE VGS (V) 16 VDS = 100V 200V 12 400V 8 SOURCE CURRENT IS (A) Tch = 25C ID = 10A 32 24 25C 16 75C 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D=1 7 5 0.5 3 0.2 2 0.1 -1 10 7 5 3 2 1.0 0.8 PDM tw 0.6 0.05 0.02 0.01 T D= tw T 0.4 -50 0 50 100 150 Single Pulse 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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